[15p-C302-1~18] 15.6 Group IV Compound Semiconductors (SiC)

[15p-C302-15] Suppression of the forward degradation in 4H-SiC PiN diodes by employing a recombination-enhanced buffer layer

〇Takeshi Tawara^1,2, Tetsuya Miyazawa³, Mina Ryo^1,2, Masaki Miyazato^1,2, Takumi Fujimoto², Kensuke Takenaka^1,2, Shinichiro Matsunaga^1,2, Masaaki Miyajima^1,2, Akihiro Otsuki², Yoshiyuki Yonezawa¹, Tomohisa Kato¹, Hajime Okumura¹, Tsunenobu Kimoto⁴, Hidekazu Tsuchida³ (1.AIST, 2.Fuji Electric, 3.CRIEPI, 4.Kyoto Univ.)

Keywords:silicon carbide, bipolar degradation, minority carrier lifetime

4H-SiCのPiNダイオードにおいて、少数キャリア寿命の短い厚膜バッファ層をエピ／基板界面に導入してバイポーラ劣化現象の抑制効果を検証した。