[15p-C302-1~18] 15.6 Group IV Compound Semiconductors (SiC)

[15p-C302-8] Characterization of SiC Wafer/Device Using a Laser Terahertz Emission Microscope

〇Hidetoshi Nakanishi¹, Tatsuhiko Nishimura¹, Fujikazu Kitamura¹, Minoru Mizubata¹, Yuji Sakai², Iwao Kawayama², Masayoshi Tonouchi² (1.SCREEN, 2.ILE Osaka Univ.)

Keywords:Terahertz Wave, Wide-gap semiconductor, SiC

A laser terahertz emission microscope (LTEM) is an imaging and spectroscopic technique that measures terahertz(THz) emission from materials and devices excited by femtosecond laser pulses.Last year, we reported visualization of THz emission from the surface of GaN using LTEM.This method enables feasible evaluation of the distribution of non-radiative defects, which are undetectable with photoluminescence.Now,we succeeded in measuring and imaging THz emission from a SiC wafer and device excited by ultraviolet (UV) femtosecond laser pulses.