[15p-C302-1~18] 15.6 Group IV Compound Semiconductors (SiC)

△ [15p-C302-9] Correlation between shapes of Shockley stacking faults and
structure of basal plane dislocations in 4H-SiC epilayers

〇(M1)Akifumi Iijima¹, Jun Suda¹, Tsunenobu Kimoto¹ (1.Kyoto Univ.)

Keywords:SiC, stacking fault, basal plane dislocation

In SiC crystals, a basal plane dislocation (BPD) is dissociated into two partial dislocations (PDs), where a SF is present between them. It is still not clear why so many shapes of SSFs appear and what is the origin of the many different shapes. In this study, we investigated the growth patterns of SFs originating from BPDs including the segments using a Photoluminescence (PL) imaging technique, and clarified the correlation between shapes of SFs and structure of BPDs. Considering the Burgers vector and the direction of BPDs, we obtained 72 patterns of expanded SFs. The shapes of the expanded SFs which is considered from BPD structure well correspond to experimental results.