The 77th JSAP Autumn Meeting, 2016

Presentation information

Poster presentation

15 Crystal Engineering » 15.5 Group IV crystals and alloys

[15p-P11-1~12] 15.5 Group IV crystals and alloys

Thu. Sep 15, 2016 1:30 PM - 3:30 PM P11 (Exhibition Hall)

1:30 PM - 3:30 PM

[15p-P11-9] AuSb Induced Crystallization of Germanium Thin Films

〇(M1)Benedict Mutunga JOSEPH1, Takumi KONDO1, Tastuya SUZUKI1, Masao KAMIKO3, Kentaro KYUNO1,2 (1.SIT, 2.RCGI,SIT, 3.IIS, Tokyo Univ)

Keywords:Germanium

Low temperature growth of polycrystalline germanium thin film is realized by layer exchange mechanism using AuSb alloy. Sb is added to the Au layer in the expectation that it might lower the crystallization temperature, since Sb is known to lower the eutectic temperature of AuGe alloy. Moreover, if Sb is incorporated in the resulting crystalline Ge layer, it might be possible to realize an n-type crystalline Ge thin film at low temperature.