Oral presentation

[16a-D61-1~11] 15.5 Group IV crystals and alloys

Fri. Sep 16, 2016 9:00 AM - 11:45 AM D61 (Bandaijima Bldg.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

▲ [16a-D61-1] Realization of UTB-SGOI with tensile strain through hetero-layer transfer technique

〇(PC)WENHSIN CHANG¹, Hiroyuki Ishii¹, Hiroyuki Hattori¹, Toshifumi Irisawa¹, Noriyuki Uchida¹, Tatsuro Maeda¹ (1.AIST)

9:15 AM - 9:30 AM

[16a-D61-2] Fabrication of Ge-on-Insulator by Using Epitaxial Lift-Off (ELO)

〇(M1)Ryota Okubo¹, Xuejun Xu¹, Kentarou Sawano¹, Takuya Maruizumi¹ (1.Tokyo city Univ.)

9:30 AM - 9:45 AM

[16a-D61-3] Highly Tensile-Strained Ge-on-Quartz (GOQ) Substrate Fabricated by Wafer Bonding

〇Nayuta Shitara¹, Syunsuke Baba¹, Xuejun Xu¹, Kentaro Sawano¹, Takuya Maruizumi¹ (1.Tokyo City Univ.)

9:45 AM - 10:00 AM

[16a-D61-4] Initial growth of Ge(111) thin films on c-plane sapphire substrate

〇Yamato Kawaguchi¹, Yuhki Itoh^1,2, Tomoyuki Kawashima¹, Katsuyoshi Washio¹ (1.Tohoku Univ., 2.JSPS Research Fellow DC)

10:00 AM - 10:15 AM

[16a-D61-5] Effects of ion implantation on strain relaxation of SiGe films on Si(110) substrates

〇Madoka Kato¹, Taiyo Murakami², Keisuke Arimoto², Junji Yamanaka², Kiyokazu Nakagawa², Kentaro Sawano¹ (1.Tokyo City Univ., 2.Univ. of Yamanashi)

10:15 AM - 10:30 AM

[16a-D61-6] Depth profile of Sn composition in Ge_1-xSn_x epitaxial layer estimated by X-ray diffraction

〇Ichiro Hirosawa¹, Kohei Suda², Naomi Sawamoto², Hideaki Machida³, Masato Ishikawa³, Hiroshi Sudoh³, Yoshio Ohshita⁴, Atsushi Ogura² (1.JASRI, 2.Meiji Univ, 3.Gas-phase Growth Ltd., 4.Toyota Tech. Inst.)

10:30 AM - 10:45 AM

△ [16a-D61-7] Ge_1-xSn_x Epitaxial Growth on Ge Substrate by MOCVD (4)
Increase of Sn Concentration using Surfactant Effect of Sb Atom

〇Kohei Suda¹, Naomi Sawamoto¹, Hideaki Machida², Masato Ishikawa², Hiroshi Sudoh², Yoshio Ohshita³, Koji Usuda⁴, Ichiro Hirosawa⁵, Atsushi Ogura¹ (1.Meiji Univ., 2.Gas-phase Growth Ltd., 3.Toyota Tech. Inst., 4.Toshiba Corp., 5.JASRI)

10:45 AM - 11:00 AM

[16a-D61-8] Selective Growth of Epitaxial Ge_1−xSn_x Thin Films using Metal-Organic Chemical Vapor Deposition

〇Tomoya Washizu¹, Shinichi Ike^1,2, Wakana Takeuchi¹, Osamu Nakatsuka¹, Shigeaki Zaima³ (1.Nagoya Univ., 2.JSPS Research Fellow, 3.IMaSS, Nagoya Univ.)

11:00 AM - 11:15 AM

[16a-D61-9] Epitaxial growth of heavily doped n-Ge layers by MOCVD with in situ P-doping

〇Shinichi IKE^1,2, Wakana Takeuchi¹, Osamu Nakatsuka¹, Shigeaki Zaima^1,3 (1.Grad. Sch. of Eng., Nagoya Univ., 2.JSPS Research Fellow, 3.IMaSS, Nagoya Univ.)

11:15 AM - 11:30 AM

△ [16a-D61-10] Evaluation of Anisotropic Biaxial Strain in Ge1-xSnx Mesa Structure by Oil-Immersion Raman Spectroscopy

〇Tatsumi Murakami¹, Kazuma Takeuchi¹, Ryo Yokogawa¹, Kohei Suda¹, Seiya Ishihara^1,2, Atsushi Ogura¹ (1.Meiji Univ., 2.JSPS Research Fellow DC)

11:30 AM - 11:45 AM

[16a-D61-11] First-principles calculation for valence band offset of Si_1–xSn_x

〇Yuki Nagae¹, Masashi Kurosawa^1,2,3,4, Masaaki Araidai^1,2,3, Osamu Nakatsuka¹, Kenji Shiraishi^1,3, Shigeaki Zaima^1,3 (1.Grad. Sch. Eng., Nagoya Univ., 2.Inst. Adv. Res., Nagoya Univ., 3.IMaSS, Nagoya Univ., 4.PRESTO, JST)

Oral presentation

[16p-D61-1~12] 15.5 Group IV crystals and alloys

Fri. Sep 16, 2016 1:15 PM - 4:30 PM D61 (Bandaijima Bldg.)

Kentarou Sawano(Tokyo City Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:15 PM - 1:30 PM

[16p-D61-1] Metal-Induced Lateral Crystallization of a-GeSn on Insulating Substrate -Elucidation of Crystallization Mechanism-

〇Takatsugu Sakai¹, Taizoh Sadoh¹, Ryo Matsumura¹, Masanobu Miyao¹ (1.Kyushu Univ.)

1:30 PM - 1:45 PM

[16p-D61-2] Low-Temperature Formation of n-Type Ge/Insulator by Sb-Induced Layer Exchange Crystallization

〇Hongmiao Gao¹, Rikuta Aoki², Masaya Sasaki², Masanobu Miyao², Taizoh Sadoh² (1.EECS, Kyushu Univ., 2.ISEE, Kyushu Univ.)

1:45 PM - 2:00 PM

[16p-D61-3] Low-temperature synthesis of multi-layer graphene on insulator by Ni-induced layer exchange growth

〇Hiromasa Murata¹, Kaoru Toko¹, Takashi Suemasu¹ (1.Univ. of Tsukuba)

2:00 PM - 2:15 PM

[16p-D61-4] Al-induced crytallization of Si_1-xGe_x thin film on glass and its thermoelectric properties

〇Mitsuki Nakata¹, Kaoru Toko¹, Atsushi Yamamoto², Takashi Suemasu¹ (1.Univ. of Tsukuba, 2.AIST)

2:15 PM - 2:30 PM

[16p-D61-5] Thermoelectric Properties of p-Type Poly-GeSn Films Grown on Insulators

〇Masashi Kurosawa^1,2,3,4, Kun Liu², Momoka Izawa⁵, Isao Tsunoda⁵, Shigeaki Zaima^1,2 (1.IMaSS, Nagoya Univ., 2.Grad. Sch. of Eng., Nagoya Univ., 3.IAR, Nagoya Univ., 4.PRESTO, JST, 5.NIT, Kumamoto College)

2:30 PM - 2:45 PM

[16p-D61-6] Enhancement of Low-Temperature Solid Phase Crystallization for Amorphous GeSn on Insulator
- Precursor-Modulation by Laser Irradiation -

〇Kenta Moto¹, Takayuki Sugino¹, Taizoh Sadoh¹, Hiroshi Ikenoue¹, Masanobu Miyao¹ (1.ISEE, Kyushu Univ.)

2:45 PM - 3:00 PM

△ [16p-D61-7] Heavy n-type doping for poly-GeSn by using pulsed laser annealing in water

〇Kouta Takahashi^1,2, Masashi Kurosawa^1,3,4, Hiroshi Ikenoue⁵, Mitsuo Sakashita¹, Osamu Nakatsuka¹, Shigeaki Zaima^1,3 (1.Grad. Sch. of Eng., Nagoya Univ., 2.JSPS Research Fellow (DC), 3.IMaSS, Nagoya Univ., 4.PRESTO, JST, 5.Grad. Sch. of ISEE, Kyushu Univ.)

3:15 PM - 3:30 PM

[16p-D61-8] Low-temperature Ge quantum dot formation via in-situ carbon mediation

〇Kaito Takeshima¹, Yuhki Itoh^1,2, Tomoyuki Kawashima¹, Katsuyoshi Washio¹ (1.Tohoku Univ., 2.JSPS Research Fellow DC)

3:30 PM - 3:45 PM

[16p-D61-9] Influence of excessive carbon on Ge quantum dots formation using C-Si reaction

〇Kosuke Yasuta¹, Yuhki Itoh^1,2, Tomoyuki Kawashima¹, Katsuyoshi Washio¹ (1.Tohoku Univ., 2.JSPS Research Fellow DC)

3:45 PM - 4:00 PM

△ [16p-D61-10] Photoluminescence property of multi-stacked structure of Ge quantum dots utilizing C-Si reaction

〇(D)Yuhki Itoh^1,2, Tomoyuki Kawashima¹, Katsuyoshi Washio¹ (1.Tohoku Univ., 2.JSPS Research Fellow)

4:00 PM - 4:15 PM

▼ [16p-D61-11] Realization of vertical Ge/Si nanopillars by maskless etching of Ge quantum dot
nanostructures

〇Sergii Tutashkonko¹, Noritaka Usami¹ (1.Nagoya Univ.)

4:15 PM - 4:30 PM

[16p-D61-12] Real-time spectro-ellipsometric discrimination of 2D and 3D growth of Ge on SiO₂

〇Housei Akazawa¹ (1.NTT DIC)

Poster presentation

[15p-P11-1~12] 15.5 Group IV crystals and alloys

Thu. Sep 15, 2016 1:30 PM - 3:30 PM P11 (Exhibition Hall)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

+Add all to schedule

1:30 PM - 3:30 PM

△ [15p-P11-1] Density functional theory calculations on atomic configurations and bandgap of C and Sn doped Si crystal

〇(M2)Kento Toyosaki¹, Koji Sueoka² (1.Graduate School of Okayama Pref. Univ, 2.Okayama Pref. Univ)

1:30 PM - 3:30 PM

△ [15p-P11-2] First principles calculation of formation energy of C and Sn atoms, and evaluation of their thermal equilibrium concentrations in Si (001) thin film

〇Kai Tadano¹, Koji Sueoka² (1.Graduate School of Engineering, Okayama Pref. Univ., 2.Okayama Pref. Univ.)

1:30 PM - 3:30 PM

[15p-P11-3] Fabrication of crystalline Ge thin film by annealing AuGe/Au bilayer

〇Satoshi Akutsu¹, Masao Kamiko², Kentaro Kyuno^1,3 (1.Shibaura inst. of tech, 2.Univ of Tokyo., 3.RCGI SIT)

1:30 PM - 3:30 PM

[15p-P11-4] Fabrication of crystalline Ge thin film by annealing AuGe/Au bilayer

〇(M1)Kenta Kumagai¹, kimio kamiko², kentaro kyuno^1,3 (1.Shibaura Inst., 2.University of Tokyo., 3.RCGI SIT)

1:30 PM - 3:30 PM

[15p-P11-5] Crystallization of Ge thin films by cosputtering of Ge and Au (Ⅲ)

〇Satoshi Takatorige¹, Masao Kamiko², Kentaro Kyuno^1,3 (1.Shibaura Inst of Tech, 2.Univ of Tokyo, 3.RCGI)

1:30 PM - 3:30 PM

[15p-P11-6] Influence of growth rate on surface morphology of tensile-strained Si/SiGe/Si(110) heterostructures

〇(M2)Kei Sato¹, Naoto Utsuyama¹, Takane Yamada¹, Keisuke Arimoto¹, Junji Yamanaka¹, Kosuke Hara¹, Kentarou Sawano², Noritaka Usami³, Kiyokazu Nakagawa¹ (1.CCST Univ. of Yamanashi, 2.Nagoya Univ., 3.ARL Tokyo City Univ.)

1:30 PM - 3:30 PM

[15p-P11-7] Surface morphology development during growth of tensile-strained Si/relaxed SiGe/Si(110) heterostructure

〇(M1)Takane Yamada¹, Naoto Utsuyama¹, Kei Sato¹, Mai Shirakura², Chiaya Yamamoto³, Keisuke Arimoto¹, Junji Yamanaka¹, Kousuke Hara¹, Noritaka Usami⁴, Kentarou Sawano⁵, Kiyokazu Nakagawa¹ (1.CCST Univ. of Yamanashi, 2.CCT Univ. of Yamanashi, 3.CIA Univ. of Yamanashi, 4.Nagoya Univ., 5.ARL Tokyo City Univ.)

1:30 PM - 3:30 PM

[15p-P11-8] Structure analysis of Si/Si_1-xC_x/Si(001) formed using ion implantation strain relaxation method

〇Taiyo Murakami¹, Keisuke Arimoto¹, Jyunji Yamanaka¹, Kosuke Hara¹, Chiaya Yamamoto², Noritaka Usami³, Yusuke Hoshi³, You Arisawa³, Kentarou Sawano⁴, Kiyokazu Nakagawa¹ (1.CCST Univ. of Yamanashi, 2.CCT Univ. of Yamanashi, 3.Nagoya Univ., 4.Tokyo City Univ.)

1:30 PM - 3:30 PM

▲ [15p-P11-9] AuSb Induced Crystallization of Germanium Thin Films

〇(M1)Benedict Mutunga JOSEPH¹, Takumi KONDO¹, Tastuya SUZUKI¹, Masao KAMIKO³, Kentaro KYUNO^1,2 (1.SIT, 2.RCGI,SIT, 3.IIS, Tokyo Univ)

1:30 PM - 3:30 PM

[15p-P11-10] Evaluation of Strained-Si formed by low-temperature Sputter Epitaxy Method

〇Kyohei Degura¹, Akira Motohashi¹, Katsumi Okubo¹, Nobumitsu Hirose², Akifumi Kasamatsu², Takashi Mimura², Toshiaki Matsui², Takahiro Tsukamoto¹, Yoshiyuki Suda¹ (1.Tokyo Univ. of Agric. & Technol., 2.National Inst. of Information and Communications Technol.)

1:30 PM - 3:30 PM

[15p-P11-11] Chemical Vapor Synthesis of diamond nano-powder by using microwave plasma torch and its evaluation

〇(M1)Ryota Yamada¹, Yuma Murata¹, Yuki Saito¹, Katsumi Tanaka¹, Hideo Isshiki¹ (1.Dentsu Univ.)

1:30 PM - 3:30 PM

[15p-P11-12] Synthesis of diamond single-crystal thin film on Si substrate

〇(M1)Yuki Saito¹, Ryouta Yamada¹, Hideo Isshiki¹ (1.Dentsu Univ)

Sessions

15 Crystal Engineering » 15.5 Group IV crystals and alloys

[16a-D61-1~11] 15.5 Group IV crystals and alloys

▲ [16a-D61-1] Realization of UTB-SGOI with tensile strain through hetero-layer transfer technique

△ [16a-D61-7] Ge1-xSnx Epitaxial Growth on Ge Substrate by MOCVD (4)Increase of Sn Concentration using Surfactant Effect of Sb Atom

△ [16a-D61-10] Evaluation of Anisotropic Biaxial Strain in Ge1-xSnx Mesa Structure by Oil-Immersion Raman Spectroscopy

[16p-D61-1~12] 15.5 Group IV crystals and alloys

△ [16p-D61-7] Heavy n-type doping for poly-GeSn by using pulsed laser annealing in water

△ [16p-D61-10] Photoluminescence property of multi-stacked structure of Ge quantum dots utilizing C-Si reaction

▼ [16p-D61-11] Realization of vertical Ge/Si nanopillars by maskless etching of Ge quantum dotnanostructures

[15p-P11-1~12] 15.5 Group IV crystals and alloys

△ [15p-P11-1] Density functional theory calculations on atomic configurations and bandgap of C and Sn doped Si crystal

△ [15p-P11-2] First principles calculation of formation energy of C and Sn atoms, and evaluation of their thermal equilibrium concentrations in Si (001) thin film

▲ [15p-P11-9] AuSb Induced Crystallization of Germanium Thin Films

Authentication

△ [16a-D61-7] Ge_1-xSn_x Epitaxial Growth on Ge Substrate by MOCVD (4)
Increase of Sn Concentration using Surfactant Effect of Sb Atom

▼ [16p-D61-11] Realization of vertical Ge/Si nanopillars by maskless etching of Ge quantum dot
nanostructures