[15p-P11-1~12] 15.5 Group IV crystals and alloys

[15p-P11-7] Surface morphology development during growth of tensile-strained Si/relaxed SiGe/Si(110) heterostructure

〇(M1)Takane Yamada¹, Naoto Utsuyama¹, Kei Sato¹, Mai Shirakura², Chiaya Yamamoto³, Keisuke Arimoto¹, Junji Yamanaka¹, Kousuke Hara¹, Noritaka Usami⁴, Kentarou Sawano⁵, Kiyokazu Nakagawa¹ (1.CCST Univ. of Yamanashi, 2.CCT Univ. of Yamanashi, 3.CIA Univ. of Yamanashi, 4.Nagoya Univ., 5.ARL Tokyo City Univ.)

Keywords:Strained Si, semiconductor