[15p-P11-1~12] 15.5 Group IV crystals and alloys

[15p-P11-6] Influence of growth rate on surface morphology of tensile-strained Si/SiGe/Si(110) heterostructures

〇(M2)Kei Sato¹, Naoto Utsuyama¹, Takane Yamada¹, Keisuke Arimoto¹, Junji Yamanaka¹, Kosuke Hara¹, Kentarou Sawano², Noritaka Usami³, Kiyokazu Nakagawa¹ (1.CCST Univ. of Yamanashi, 2.Nagoya Univ., 3.ARL Tokyo City Univ.)

Keywords:strained Si, semiconductor