The 77th JSAP Autumn Meeting, 2016

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Oral presentation

15 Crystal Engineering » 15.5 Group IV crystals and alloys

[16a-D61-1~11] 15.5 Group IV crystals and alloys

Fri. Sep 16, 2016 9:00 AM - 11:45 AM D61 (Bandaijima Bldg.)

Taizoh Sadoh(Kyushu Univ.)

11:00 AM - 11:15 AM

[16a-D61-9] Epitaxial growth of heavily doped n-Ge layers by MOCVD with in situ P-doping

〇Shinichi IKE1,2, Wakana Takeuchi1, Osamu Nakatsuka1, Shigeaki Zaima1,3 (1.Grad. Sch. of Eng., Nagoya Univ., 2.JSPS Research Fellow, 3.IMaSS, Nagoya Univ.)

Keywords:Germanium, n-type doping, MOCVD