The 77th JSAP Autumn Meeting, 2016

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Oral presentation

15 Crystal Engineering » 15.5 Group IV crystals and alloys

[16p-D61-1~12] 15.5 Group IV crystals and alloys

Fri. Sep 16, 2016 1:15 PM - 4:30 PM D61 (Bandaijima Bldg.)

Kentarou Sawano(Tokyo City Univ.)

4:15 PM - 4:30 PM

[16p-D61-12] Real-time spectro-ellipsometric discrimination of 2D and 3D growth of Ge on SiO2

〇Housei Akazawa1 (1.NTT DIC)

Keywords:Ge, SiO2, spectroscopic ellipsometry

The formation of Ge dots on SiO2 has been attracterd attention aimed at application to high-density memories as well as light emitters. For controlling dot size, density, and shape, critical points where growth mode changes between 2D and 3D need to be known during growth. We applied real-time spectro-ellipsometric monitoring to judge whether the system goes into 2D or 3D growth at the early stage of growth.