Effects of ion implantation on strain relaxation of SiGe films on Si(110) substrates

Presentation information

Oral presentation

15 Crystal Engineering » 15.5 Group IV crystals and alloys

Fri. Sep 16, 2016 9:00 AM - 11:45 AM D61 (Bandaijima Bldg.)

Taizoh Sadoh(Kyushu Univ.)

10:00 AM - 10:15 AM

〇Madoka Kato¹, Taiyo Murakami², Keisuke Arimoto², Junji Yamanaka², Kiyokazu Nakagawa², Kentaro Sawano¹ (1.Tokyo City Univ., 2.Univ. of Yamanashi)

Keywords:Si(110), ion-implantation