[16a-D61-1~11] 15.5 Group IV crystals and alloys

[16a-D61-6] Depth profile of Sn composition in Ge_1-xSn_x epitaxial layer estimated by X-ray diffraction

〇Ichiro Hirosawa¹, Kohei Suda², Naomi Sawamoto², Hideaki Machida³, Masato Ishikawa³, Hiroshi Sudoh³, Yoshio Ohshita⁴, Atsushi Ogura² (1.JASRI, 2.Meiji Univ, 3.Gas-phase Growth Ltd., 4.Toyota Tech. Inst.)

Keywords:X-ray diffraction, GeSn

Depth profile of Sn composition in Ge_1-xSn_x epitaxial film on Ge substrate was estimated by X-ray diffraction. Observed profile indicates that lattice parameter is larger at the top of epitaxitial film and that Sn composition is higher.