[15p-P15-1~8] 6.5 Surface Physics, Vacuum

[15p-P15-2] Analysis of thermal stability of graphene thin layers on silicon oxide films

〇Arata Ogawa¹, Shinya Ohno², Akitaka Yoshigoe² (1.Yokohama Nat'l Univ., 2.JAEA)

Keywords:graphene, PES

We investigated graphene thin films grown on SiO2 by high resolution photoelectron spectroscopy with synchrotron radiation. We found that the intensity ratio of the C 1s and O 1s states changes with increasing the sample temperature. The results indicate that the average position of the graphene thin layers may move upward upon annealing. We will discuss possible mechanism of this novel effect.