[15p-P3-1~32] 6.3 Oxide electronics

[15p-P3-15] Formative Mechanism of Conducting Path in Resistive Random Access Memory
~ Electric contact method dependence of Conducting Path Formation ~

〇(B)Sohta Hida¹, Takahiro Yamasaki², Takumi Moriyama¹, Takahisa Ohno², Michiko Yoshitake², Satoru Kishida^1,3, Kentaro Kinoshita^1,3 (1.Tottori Univ., 2.NIMS, 3.TiFREC)

Keywords:ReRAM, grain boundaries, NiO