[15p-P6-1~16] 8.3 deposition of thin film and surface treatment

[15p-P6-13] Surface Treatment of Semiconductor Thermionic Emitter Using Ar/O₂ Mixed Surface-wave Plasma

〇takatoshi watanabe¹, Yoshiki Nakano¹, Akihisa Ogino¹, Naoya Morioka², Yuji Kimura² (1.Shizuoka Univ., 2.DENSO CORP.)

Keywords:thermionic emission, semiconductor, microwave plasma

To decrease the operation temperature of thermionic energy converter (TEC) which has been a subject of conventional TEC with metal electrodes, the improvement of Cs stability on a hot emitter and the characteristics of thermionic emission from semiconductor surfaces, such as diamond thin film and Si treated using surface wave plasma, were discussed. The emission characteristics of plasma treated surfaces was improved since the Cs adsorption was stabilized by plasma introduced oxygen atoms.