[16a-A21-1~12] 15.4 III-V-group nitride crystals

[16a-A21-10] Formation of semipolar GaN etched by inductive coupled plasma reactive ion etching on highly chemical reaction

〇Kei Nagatoshi¹, Norihiro Itagaki¹, Ryo Inomoto¹, Narihito Okada¹, Tomoyasu Nishimiya², Humiharu Matsuo², Kazuyuki Tadatomo¹ (1.Yamaguchi University., 2.SAMCO Inc.)

Keywords:GaN, semipolar, etching