The 77th JSAP Autumn Meeting, 2016

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15 Crystal Engineering » 15.4 III-V-group nitride crystals

[16a-A21-1~12] 15.4 III-V-group nitride crystals

Fri. Sep 16, 2016 9:00 AM - 12:15 PM A21 (Main Hall A)

Motoaki Iwaya(Meijo Univ.), Yoshiki Saito(TOYODA GOSEI)

9:15 AM - 9:30 AM

[16a-A21-2] p-AlGaN with high hole concentration by polarization charges

〇Toshiki Yasuda1, Tetsuya Takeuchi1, Motoaki Iwaya1, Satoshi Kamiyama1, Isamu Akasaki1,2, Hiroshi Amano2,3 (1.Meijo Univ., 2.Akasaki Research Center, 3.Nagoya Univ.)

Keywords:p-type AlGaN, polarization, hole