Doping characteristics of n-GaN on Si

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

Fri. Sep 16, 2016 9:00 AM - 12:15 PM A21 (Main Hall A)

Motoaki Iwaya(Meijo Univ.), Yoshiki Saito(TOYODA GOSEI)

10:45 AM - 11:00 AM

〇Yuya Urayama¹, Takeaki Hamada¹, Keisuke Nakamura¹, Takashi Egawa¹ (1.Nagoya Inst. of Tech)

Keywords:GaN