The 77th JSAP Autumn Meeting, 2016

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Joint Session K "Wide bandgap oxide semiconductor materials and devices" » Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[16a-A22-1~10] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Fri. Sep 16, 2016 9:00 AM - 11:45 AM A22 (Main Hall B)

Toshiyuki Kawaharamura(Kochi Univ. of Tech.)

9:00 AM - 9:15 AM

[16a-A22-1] Fabrication and Characterization of 2-inch (001) β-Ga2O3 Wafers for Power devices

〇Takekazu Masui1, Koshi Kimiyoshi1, Watanabe Shinya1, Kuramata Akito1, Yamakoshi Shigenobu1 (1.Tamura Corp.)

Keywords:gallium oxide, power device

Ga2O3 is expected as a new material for next-generation power devices. We will report on the successful fabrication of 2-inch (001) β-Ga2O3 wafers for power devices. The bulk single crystals were grown by EFG method. The wafers were then fabricated through the steps of slicing, lapping and CMP. There were few twin crystal defects in the wafers. The FWHM of XRD rocking curve was 34 arcsec.