[16a-A22-1~10] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[16a-A22-10] Fabrication of Sn doped α-(Al_xGa_1-x)₂O₃ Thin Films and Measurements of Electron Spin Resonance

〇Shu Takemoto¹, Takayuki Uchida¹, Riena Jinno¹, Kentaro Kaneko¹, Katsuhisa Tanaka¹, Shizuo Fujita¹ (1.Kyoto Univ.)

Keywords:semiconductor, oxide