[16a-A22-1~10] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[16a-A22-6] Epitaxial growth of ε-Ga₂O₃ by mist CVD technique

〇HIROYUKI NISHINAKA¹, MASAHIRO YOSHIMOTO¹ (1.Kyoto Inst. of Tech.)

Keywords:gallium oxide, mist CVD, heteroepitaxy