The 77th JSAP Autumn Meeting, 2016

Presentation information

Oral presentation

Joint Session K "Wide bandgap oxide semiconductor materials and devices" » Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[16a-A22-1~10] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Fri. Sep 16, 2016 9:00 AM - 11:45 AM A22 (Main Hall B)

Toshiyuki Kawaharamura(Kochi Univ. of Tech.)

11:00 AM - 11:15 AM

[16a-A22-8] Fabrication and electrical property analysis of Si doped α-Ga2O3

Takayuki Uchida1, Riena Jinno1, Shu Takemoto1, Kentaro Kaneko1, Shizuo Fujita1 (1.Kyoto Univ.)

Keywords:Ga2O3, power devices

近年注目されるGa2O3のコランダム構造であるα-Ga2O3において、電気導電性制御に向けて、Siドープを行った。その作製手法、電気特性について発表を行う。