The 77th JSAP Autumn Meeting, 2016

Presentation information

Oral presentation

16 Amorphous and Microcrystalline Materials » 16.1 Fundamental properties, evaluation, process and devices in disordered materials

[16a-A25-1~16] 16.1 Fundamental properties, evaluation, process and devices in disordered materials

Fri. Sep 16, 2016 9:00 AM - 1:15 PM A25 (202)

Takenobu Suzuki(Toyota Tech. Inst.), Akira Saitoh(Ehime Univ.)

9:45 AM - 10:00 AM

[16a-A25-4] Ultraviolet/visible emission from deep level defects in boron nitride

Emi Tsushima1, Takashi Uchino1 (1.Kobe Univ.)

Keywords:boron nitride

We investigate the deep-level photoluminescence (PL) properties of boron nitride (BN) particles with different crystalline structures. We found that the PL peak wavelength of turbostratic BN is located at longer wavelength regions than that of hexagonal BN, indicating that the energy levels of the deep-level emission centers depend on the surrounding crystalline matrix. We will also show the temperature dependent PL spectra along with the PL decay profiles for these BN samples.