[16a-A26-1~7] 13.7 Nano structures and quantum phenomena

▲ [16a-A26-1] Analysis of phonon assistance as a function of temperature in inter-band tunneling in 2D Si lateral Esaki diodes

〇Daniel Ioan Moraru¹, Mitsuki Shibuya¹, Ratno Nuryadi², Masahiro Hori¹, Yukinori Ono¹, Michiharu Tabe¹ (1.RIE, Shizuoka Univ., 2.AAAT, Indonesia)

Keywords:Si nano-tunnel diode, inter-band tunneling, phonon

Inter-band tunneling in Si is a key phenomenon for high-speed applications, such as tunnel field-effect transistors (TFETs) and Esaki diodes. Although Si is advantageous as a CMOS-compatible material, its indirect bandgap and phonon assistance limit the tunneling current. As device dimensions are scaled down, however, phonon assistance may significantly change. Here, we report a study of temperature dependence of 2D lateral Si Esaki diodes that reveals the impact of 2D quantization on phonon assistance.