[16a-A26-1~7] 13.7 ナノ構造・量子現象

▲ [16a-A26-1] Analysis of phonon assistance as a function of temperature in inter-band tunneling in 2D Si lateral Esaki diodes

〇Daniel Ioan Moraru¹、Mitsuki Shibuya¹、Ratno Nuryadi²、Masahiro Hori¹、Yukinori Ono¹、Michiharu Tabe¹ (1.RIE, Shizuoka Univ.、2.AAAT, Indonesia)

キーワード：Si nano-tunnel diode, inter-band tunneling, phonon

Inter-band tunneling in Si is a key phenomenon for high-speed applications, such as tunnel field-effect transistors (TFETs) and Esaki diodes. Although Si is advantageous as a CMOS-compatible material, its indirect bandgap and phonon assistance limit the tunneling current. As device dimensions are scaled down, however, phonon assistance may significantly change. Here, we report a study of temperature dependence of 2D lateral Si Esaki diodes that reveals the impact of 2D quantization on phonon assistance.