[16a-A26-1~7] 13.7 Nano structures and quantum phenomena

△ [16a-A26-3] Spin relaxation in Si doped In_0.8Ga_0.2As/Al_0.5Ga_0.5As/AlAs_0.56Sb_0.44 coupled double quantum wells

〇tomoki ishikawa¹, Shin-ichiro Gozu², Teruo Mozume², Shunsuke Ohki¹, Kizuku Yamada¹, Takuya Kamezaki¹, Atsushi Tackeuchi¹ (1.Waseda Univ., 2.AIST)

Keywords:spintronics, coupled double quantum wells, Compound Semiconductor

InGaAs/AlAsSb coupled double quantum wells (CDQWs) have been attracting much attention for their use in all-optical switches at 1.55 μm wavelength because of their large conduction band offset of 1.7 eV. In this study, we have investigated the spin relaxation in Si doped In_0.8Ga_0.2As/Al_0.5Ga_0.5As/AlAs_0.56Sb_0.44 CDQWs using time-resolved spin-dependent pump and probe reflectance measurements to observe the time evolution of the spin polarization. As a result, Bir-Aronov-Pikus process becomes effective at 10 K by Si doping.