[16a-A26-1~7] 13.7 Nano structures and quantum phenomena

△ [16a-A26-5] Spin relaxation mechanism of GaAs/AlGaAs resonant tunneling bi-quantum-well

〇Yoshiki Nakamura¹, Canyu Jiang¹, Ko Nakayama¹, Masayuki Iida¹, Shima Tanigawa¹, Shunichi Muto², Atsushi Tackeuchi¹ (1.Waseda Univ., 2.Hokkaido Univ)

Keywords:tunneling bi-quantum-well, spin relaxation, resonant tunneling

In tunneling bi-quantum-well (TBQ), photoexcited electrons in the narrow well can tunnel to the wide well. Under resonant tunneling condition, the further reduction of the tunneling time was reported. In this study, we report the electron spin relaxation in wide quantum wells in GaAs/AlGaAs TBQ structures including resonant tunneling case. As a result, it is considered that the spin relaxation in narrow wells is affected heavily by the tunneling between the ground state of narrow well and the first excited state of wide well.