[16a-B1-1~13] 13.8 化合物及びパワー電子デバイス・プロセス技術

▼ [16a-B1-1] AlGaN/GaN HEMTs on Free-standing GaN Substrates with Critical Electric Field of 1.2 MV/cm

〇(M2)JIEHONG NG¹、Joel Asubar¹、Hirokuni Tokuda¹、Masaaki Kuzuhara¹ (1.University of Fukui)

キーワード：AlGaN/GaN HEMTs, GaN substrates, breakdown voltage

Owing to its expected high critical electric field of over 3 MV/cm, GaN is predicted to play the role of key semiconductor material for realizing high-voltage and low-loss power devices. This is partially because AlGaN/GaN HEMTs are usually fabricated on foreign substrates such as sapphire, SiC, and silicon, which have thick and complicated buffer layer structures that could be the source of leakage current. In this work, we have investigated the relationship between breakdown voltage and gate-to-drain spacing of AlGaN/GaN HEMTs fabricated on free-standing GaN substrates.