The 77th JSAP Autumn Meeting, 2016

Presentation information

Oral presentation

13 Semiconductors » 13.8 Compound and power electron devices and process technology

[16a-B1-1~13] 13.8 Compound and power electron devices and process technology

Fri. Sep 16, 2016 9:00 AM - 12:30 PM B1 (Exhibition Hall)

Taketomo Sato(Hokkaido Univ.)

12:00 PM - 12:15 PM

[16a-B1-12] Visualization of Two-Dimensional Electron Gas Layer Formed at GaN/AlGaN Interface by High Sensitivity Electron Holography

KAZUO YAMAMOTO1 (1.JFCC)

Keywords:GaN semiconductor, electron gas, electron holography

To develop next generation GaN devices, it is important to directly evaluate 2-dimensional electron gas or hole gas layers formed around GaN/AlGaN hetero-interfaces. Here, we succeeded in visualizing the 2-dimensional electron gas layer by high sensitivity electron holograpy.