[16a-B1-1~13] 13.8 Compound and power electron devices and process technology

[16a-B1-12] Visualization of Two-Dimensional Electron Gas Layer Formed at GaN/AlGaN Interface by High Sensitivity Electron Holography

〇KAZUO YAMAMOTO¹ (1.JFCC)

Keywords:GaN semiconductor, electron gas, electron holography

To develop next generation GaN devices, it is important to directly evaluate 2-dimensional electron gas or hole gas layers formed around GaN/AlGaN hetero-interfaces. Here, we succeeded in visualizing the 2-dimensional electron gas layer by high sensitivity electron holograpy.