[16a-B1-1~13] 13.8 Compound and power electron devices and process technology

[16a-B1-13] Current AFM characterization of AlN initial layer in AlGaN/GaN HEMT on Si substrate

〇Ken Kakamu¹, Yuya Yamaoka^1,2, Takashi Egawa¹, Akinori Ubukata², Toshiya Tabuchi², Koh Matsumoto² (1.Nagoya Inst. of Tech., 2.Taiyo Nippon Sanso Corp.)

Keywords:Gan on Si