[16a-B1-1~13] 13.8 Compound and power electron devices and process technology

[16a-B1-4] Elucidating the mechanism of current collapse in GaN-HEMT using the operando microspectroscopy

〇Keiichi Omika¹, Yasunori Tateno², Tsuyoshi Kouchi², Tsutomu Komatani³, Naoka Nagamura⁴, Syun Konno⁵, Yoshinobu Takahashi⁵, Masato Kotsugi⁵, Koji Horiba⁶, Masaharu Oshima⁷, Maki Suemitsu¹, Hirokazu Fukidome¹ (1.Tohoku Univ. RIEC, 2.Sumitomo Electric Industries, Ltd., 3.Sumitomo Electric Device Innovations, Inc., 4.NIMS, 5.Tokyo University of Science, 6.KEK/PF, 7.The University of Tokyo)

Keywords:GaN-HEMT, current collapse phenomenon, operando microspectroscopy

One of the important issues for achieving high-performance GaN-HEMTs is the current collapse phenomenon that is the current reduction caused by applying high stress voltage. In this talk, we will present our study for the purpose of clarifying electron-trapping processes of surface states of GaN-HEMT by using operando x-ray spectromicroscopy that enables to element-selectively observe electronic states of surfaces with a high lateral resolution of 70 nm.