[16a-B1-1~13] 13.8 Compound and power electron devices and process technology

△ [16a-B1-7] Impact of Threading Dislocations on Electrical Properties of MOVPE-grown n-type GaN

〇Naoki Sawada¹, Tetsuo Narita², Tsutomu Uesugi², Tetsu Kachi³, Masahiro Horita¹, Jun Suda¹ (1.Kyoto Univ., 2.TOYOTA Cent. R&D Labs., 3.Nagoya Univ.)

Keywords:GaN, Threading Dislocations, Electrical Properties

To investigate impact of threading dislocations on electrical properties, Hall-effect measurements of Si-doped n-type GaN on AlN/sapphire template and on GaN substrate were performed. The sample were grown simultaneously by MOVPE method. From the result of temperature dependence of Hall mobility, Hall mobility of n-GaN on AlN/sapp. template is lower than that of n-GaN on GaN substrate in the whole temperature range. This is because of the impact of dislocation scattering, and the impact is stronger as the Si doping concentration is decreasing.