The 77th JSAP Autumn Meeting, 2016

Presentation information

Oral presentation

13 Semiconductors » 13.8 Compound and power electron devices and process technology

[16a-B1-1~13] 13.8 Compound and power electron devices and process technology

Fri. Sep 16, 2016 9:00 AM - 12:30 PM B1 (Exhibition Hall)

Taketomo Sato(Hokkaido Univ.)

10:45 AM - 11:00 AM

[16a-B1-7] Impact of Threading Dislocations on Electrical Properties of MOVPE-grown n-type GaN

Naoki Sawada1, Tetsuo Narita2, Tsutomu Uesugi2, Tetsu Kachi3, Masahiro Horita1, Jun Suda1 (1.Kyoto Univ., 2.TOYOTA Cent. R&D Labs., 3.Nagoya Univ.)

Keywords:GaN, Threading Dislocations, Electrical Properties

To investigate impact of threading dislocations on electrical properties, Hall-effect measurements of Si-doped n-type GaN on AlN/sapphire template and on GaN substrate were performed. The sample were grown simultaneously by MOVPE method. From the result of temperature dependence of Hall mobility, Hall mobility of n-GaN on AlN/sapp. template is lower than that of n-GaN on GaN substrate in the whole temperature range. This is because of the impact of dislocation scattering, and the impact is stronger as the Si doping concentration is decreasing.