[16a-B10-1~13] 13.4 Si wafer processing /Si based thin film /MEMS/Integration technology

[16a-B10-5] Low contact resistance in metal/n-Ge junctions by inserting W-germanide films synthesized by thermal chemical vapor deposition

〇Naoya Okada^1,2, Noriyuki Uchida², Toshihiko Kanayama² (1.JST-PRESTO, 2.AIST)

Keywords:contact, germanide, CVD

We demonstrated Fermi-level depinning in metal/n-Ge junctions and a reduction of specific contact resistivity of n-Ge by inserting an semiconducting W-germinide films.