[16a-B10-1~13] 13.4 Si wafer processing /Si based thin film /MEMS/Integration technology

[16a-B10-6] Reduction of Schottky barrier height of metal/n-Ge contact by insertion of Si_xGe_1−x−ySn_y layer

〇Akihiro Suzuki^1,2, Shota Toda¹, Osamu Nakatsuka¹, Mitsuo Sakashita¹, Shigeaki Zaima^1,3 (1.Grad. Sch. of Eng., Nagoya Univ.,, 2.The Research Fellow of JSPS, 3.IMaSS, Nagoya. Univ.)

Keywords:Germanium, Schottky barrier height, Silicon germanium tin