[16a-B4-1~13] 3.11 Photonic structures and phenomena

△ [16a-B4-5] An integrated chip of the high-Q nanocavities for 1310/1550 nm bands

〇(M1)Mitsuki Kuwabara¹, Yasushi Takahashi¹, Susumu Noda² (1.Osaka Pref. Univ., 2.Kyoto Univ.)

Keywords:High-Q nanocavity, siricon photonics, optical communication

Operating wavelength range of the silicon photonics devices fabricated on SOI substrate is dependent upon the device size. It is required regioselective control the film thickness of the silicon layer to operate at different wavelengths on a single chip. We developed the etching process of Si layer by the sub-nanometer and produced a high-Q-nanocavities operating at 1.31 / 1.55 μm band to that substrate at the same time. We report that achieving a Q value of more than 1 million in both cases.