The 77th JSAP Autumn Meeting, 2016

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15 Crystal Engineering » 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[16a-B9-1~15] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

Fri. Sep 16, 2016 9:00 AM - 1:00 PM B9 (Exhibition Hall)

Tomoya Konishi(Natl. Inst. of Tech.,Anan Col.), Kohei Miura(Sumitomo Electric)

12:45 PM - 1:00 PM

[16a-B9-15] Size Evolution of InGaAs Surface Reconstructed Areas during MBE Growth

〇Tomoya Konishi1, Shiro Tsukamoto1, Tomonori Ito2, Toru Akiyama2, Ryo Kaida2 (1.NIT, Anan Col., 2.Mie Univ.)

Keywords:surface reconstruction, in situ STM, molecular beam epitaxy

QD nucleation sites (patterns) during MBE growth are still unpredictable or uncontrollable. If the nucleation is induced by the local fluctuation of surface composition, it is important to investigate its dynamic evolution during the growth. We investigate the behaviour of (n×3) surface reconstructed areas during the growth of InAs-GaAs(001).