The 77th JSAP Autumn Meeting, 2016

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Oral presentation

15 Crystal Engineering » 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[16a-B9-1~15] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

Fri. Sep 16, 2016 9:00 AM - 1:00 PM B9 (Exhibition Hall)

Tomoya Konishi(Natl. Inst. of Tech.,Anan Col.), Kohei Miura(Sumitomo Electric)

9:30 AM - 9:45 AM

△ [16a-B9-3] Analysis of the Ga incorporation mechanism in selectively-grown InGaAs on Si (111)

〇Toma Watanabe1, Yoshiaki Nakano1, Masakazu Sugiyama1 (1.Univ. of Tokyo)

Keywords:on Si, selective area growth