Improvement in surface morphology of GaSb buffer layer by 2-step high and low temperature growth

Shigekazu Okumura; Shuichi Tomabechi; Ryo Suzuki; Yusuke Matsukura; Koji Tsunoda; Junichi Kon; Hironori Nishino

Presentation information

Oral presentation

15 Crystal Engineering » 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[16a-B9-1~15] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

Fri. Sep 16, 2016 9:00 AM - 1:00 PM B9 (Exhibition Hall)

Tomoya Konishi(Natl. Inst. of Tech.,Anan Col.), Kohei Miura(Sumitomo Electric)

10:00 AM - 10:15 AM

[16a-B9-5] Improvement in surface morphology of GaSb buffer layer by 2-step high and low temperature growth

〇Shigekazu Okumura¹, Shuichi Tomabechi¹, Ryo Suzuki¹, Yusuke Matsukura¹, Koji Tsunoda¹, Junichi Kon¹, Hironori Nishino¹ (1.Fujitsu Lab. LTD)

Keywords:Gallium Antimonide, Molecular beam epitaxy, Atomic force microscopy

We have investigated the effect of GaSb growth sequence to obtain smooth surface, and found that 2-step growth at high temperature growth followed by at low temperature growth provides smoother surface than the GaSb growth only at high or low growth temperature.