[16a-C302-1~12] 15.6 Group IV Compound Semiconductors (SiC)

[16a-C302-3] Oxidation-process dependence of single photon sources in 4H-SiC MOSFETs studied by confocal microscope

〇Yuta Abe¹, Mitsuo Okamoto², Ryoji Kosugi², Shinsuke Harada², Mutsuko Hatano³, Takayuki Iwasaki³, Shinobu Onoda⁴, Moriyoshi Haruyama^4,5, Wataru Kada⁵, Osamu Hanaizumi⁵, Takeshi Ohshima⁴, Takahide Umeda¹ (1.Univ. of Tsukuba, 2.AIST, 3.TIT, 4.QST, 5.Gunma Univ.)

Keywords:4H-SiC, MOSFET, single photon source

Single-photon sources (SPSs) are intensively studied using confocal microscopes; a typical example is the NV center in diamond. Recently, room-temperature bright SPSs have been found in SiC. We also found that good SPSs are formed at the SiC-SiO2 interfaces of 4H-SiC MOSFETs. In this work, we examine oxidation-process dependence of the SPSs in 4H-SiC MOSFETs by using confocal microscope, and discuss the formation of the SPSs at the SiC-MOS interfaces.