The 77th JSAP Autumn Meeting, 2016

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Oral presentation

15 Crystal Engineering » 15.6 Group IV Compound Semiconductors (SiC)

[16a-C302-1~12] 15.6 Group IV Compound Semiconductors (SiC)

Fri. Sep 16, 2016 9:00 AM - 12:15 PM C302 (Nikko Houou)

Koji Kita(Univ. of Tokyo)

9:15 AM - 9:30 AM

[16a-C302-2] Characterization of thermal SiO2/SiC interfacial transitional layer

〇Ryu Nagai1, Ryu Hasunuma1, Kikuo Yamabe1 (1.Univ. of Tsukuba)

Keywords:SiC, Dielectric film, SiO2/SiC interface