[16a-P4-1~8] 13.3 Insulator technology

△ [16a-P4-2] Characterization of Silicon Oxide Gate Dielectric layers Prepared at low temperatures Using Atmospheric Pressure Plasma Enhanced CVD

〇(M1)Yuichiro Kimoto¹, Shogo Tamaki¹, Koji Terawaki¹, Kohei Kamada¹, Hiromasa Ohmi¹, Hiroaki Kakiuchi¹, Kiyoshi Yasutake¹ (1.Osaka Univ.)

Keywords:plasma enhanced CVD, gate dielectric layers, silicon oxide thin films