[16a-P4-1~8] 13.3 Insulator technology

[16a-P4-5] The strain dependence of thermal oxidation and hydrogen annealing effect at Si/SiO₂ (001) interface in V-MOSFET

〇(M2)Shingo Kawachi¹, Shirakawa Hiroki¹, Araidai Masaaki^2,1,5, Kageshima Hiroyuki^3,5, Endoh Tetsuo^4,5, Shiraishi Kenji^2,1,5 (1.Nagoya Univ., 2.IMaSS, 3.Shimane Univ., 4.Tohoku Univ., 5.JST-ACCEL)

Keywords:semiconductor, V-MOSFET