Consideration of Fabrication Method in Si-MOS Interface Layer by Chemical Oxidation

Presentation information

Poster presentation

13 Semiconductors » 13.3 Insulator technology

Fri. Sep 16, 2016 9:30 AM - 11:30 AM P4 (Exhibition Hall)

9:30 AM - 11:30 AM

〇Yusuke Sugino¹, Yoshitaka Iwazaki¹, Tomo Ueno¹ (1.Tokyo Univ. of Agri & Tech)

Keywords:Interface Layer, SiO2, Chemical Oxidation