[16a-P5-1~32] 15.4 III-V-group nitride crystals

[16a-P5-18] Regrowth of AlGaN(Al>0.5) and AlN on AlN Template Processed by High temperature Annealing at Nitrogen Atmosphere

〇Akira Mishima¹, Kazutada Ikenaga¹, Yoshiki Yano¹, Toshiya Tabuchi¹, Koh Matsumoto¹, Hideto Miyake² (1.TNSC., 2.Mie Univ)

Keywords:MOVPE, AlN, High Temperature Anneal

To improve the performance of deep ultraviolet LEDs (DUVLEDs), high-quality AlN and AlGaN as the underlying layers are required. Recently, improvement of crystal quality of AlN buffer layer was reported using high temperature annealing under N₂-CO gas atmosphere. In this work, we investigated the characteristic of AlN and Al_0.6Ga_0.4N layers regrown on the AlN/sapphire buffer layer annealed in pure N₂ gas.