[16a-P5-1~32] 15.4 III-V-group nitride crystals

[16a-P5-19] Control of C and Si Doping in Low Si-doped GaN Using Multiwafer MOCVD Tool

〇Guanxi Piao¹, Yoshiki Yano¹, Kazutada Ikenaga¹, Akira Mishima¹, Toshiya Tabuchi¹, Koh Matsumoto¹ (1.TNSC)

Keywords:Impurity

In this work, the controllability of C and Si doping in GaN was investigated for the purpose of mass production by using a large-scale MOCVD reactor. In addition, the doping uniformity and the reproducibility with respect to low Si-doped GaN (n-GaN) growth were also investigated.We grew 1.6-µm-thick n-GaN/2.3-µm-thick undoped-GaN/low-temperature GaN buffer layers on 4-inch sapphire substrates by using an MOCVD reactor system (Taiyo Nippon Sanso Co., UR25K) with a capacity to produce 10 × 4 inch wafers.The V/III ratio was set to 3700 during n-GaN growth, and the n-GaN growth rate was 1.6 μm/h. The Si and C concentrations in n-GaN were evaluated to be 1.8 × 10¹⁶ cm⁻³ and 5.0 × 10¹⁵ cm⁻³, respectively. The standard deviations (1s) of the wafer-to-wafer carrier density for runs 1-3 were 5.8%, 5.4%, and 3.4%, respectively. 1s of the carrier density of all runs were 5.9%.