[16a-P5-1~32] 15.4 III-V-group nitride crystals

[16a-P5-20] Initial Growth Stage of MOVPE InN on Epitaxial Graphene Surfaces on 4H-SiC Substrate

〇Daiki Ishimaru¹, Yuki Tomatsu¹, Akihiro Hashimoto¹ (1.Fukui Univ.)

Keywords:nitride semiconductor, Graphene

InN is one of the mother binary nitride semiconductors for high efficiency tandem solar cell like GaN or AlN. However, it is very difficult to form the p-type InN layer, because of its high density of residual donor caused by the lattice-mismatch and the thermal expansion mismatch with the substrates. Graphene is expected to a new substrate for the high quality nitride semiconductor growth, because of its flexibility to control the interface stress. In this study, we have investigated its initial stages in the InN growth on the epitaxial graphene surface.