[16a-P5-1~32] 15.4 III-V-group nitride crystals

[16a-P5-23] Examination for control of mixed crystal ratio on growth process of In_1-XGa_XN and In_1-XAl_XN films by plasma damage-reduced ECR-MBE method

〇Tokuo Yodo¹, Ryuma Nakagawa¹, Shinya Matsushita¹, Akira Fujimoto², Yoshiyuki Harada², Mamoru Yoshimoto³ (1.Osaka Inst. of Tech., 2.Osaka Inst. of Tech. Gene., 3.Tokyo Inst.Tech.)

Keywords:Nitride Semiconductor, mixed crystal, miscibility gap

We tried to control mixed crystal ratio on growth process of In_1-XGa_XN and In_1-XAl_XN films by plasma damage-reduced ECR-MBE method. However, the optimum growth temerature of InN is very different from those of GaN and AlN. Therefore, control of miscibility gap is a key to grow the mixed crystal such as In-rich InAlN and InGaN with high crystal quality.