[16a-P5-1~32] 15.4 III-V-group nitride crystals

[16a-P5-25] Growth and characterization of AlN films grown on Si(110) substrates by MOCVD

〇Xu-Qiang Shen¹, Tokio Takahashi¹, Toshihide Ide¹, Mitsuaki Shimizu¹ (1.AIST)

Keywords:Nitrides, AlN, MOCVD

We grew AlN films on Si(110) substrates and characterize their properites by HRXRD, OM and AFM. We found that the quality of AlN films grown on Si(110) substrates is greatly improved compared with those grown on Si(111) substrates reported by other groups.