[16p-A21-1~9] 15.4 III-V-group nitride crystals

[16p-A21-6] Emission characteristics of single InGaN/GaN nanopillars fabricated by hydrogen
environment anisotropic thermal etching (HEATE) technique

〇Kanae Igarashi¹, Tomoya Mizutani¹, Shun Ishijima¹, Kohei Ogawa¹, Akihiko Kikuchi^1,2 (1.Sophia Univ., 2.Sophia Nanotechnology Research Center)

Keywords:nitride semiconductor, nano structure